Synrhesis and characterization of antimony (Sb) and Bismuth (Bi) based Ge- Te semiconductors
By: Pawan Kumar.
Contributor(s): Sharma, Ishu guide | Tripathi, S. K. guide.
Publisher: Noida, Uttar Pradesh Amity University (Amity Institute of Applied Sciences) 2018Description: xxx; 142p.ISBN: A4431413001.Subject(s): ELECTRONIC DEVICES AND CIRCUITS | SEMICONDUCTOR--CHARACTERIZATION | SEMICONDUCTORS--SYNTHESIS | Doctor of Philosophy (Physics)DDC classification: 621.38152| Item type | Current location | Call number | Status | Notes | Date due |
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Books
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Amity Central Library
Amity Central Library, Noida |
621.38152 PAW- S (Browse shelf) | Available | PHD 406 |
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| 621.38152 NEA-S Semiconductor physics and devices | 621.38152 NEA-S Semiconductor physics and devices | 621.38152 OJH- A Analysis and Optimized Design of Low Power Semiconductor Memory Cell | 621.38152 PAW- S Synrhesis and characterization of antimony (Sb) and Bismuth (Bi) based Ge- Te semiconductors | 621.38152 PHY- P Physics of semiconductor devices: | 621.38152 PIE-S Semiconductor device fundamentals | 621.38152 PIE-S Semiconductor device fundamentals |
Sharma, Ishu guide | Tripathi, S. K. guide
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